? 2003 ixys all rights reserved v ces = 1700 v i c25 = 10 a v ce(sat) = 6.0 v t fi(typ) = 35 ns ixgh 10n170a ixgt 10n170a c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z very high frequency z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds98991b(11/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c25 a v ge = 0 v note 1 t j = 125 c 500 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 4.5 6.0 v t j = 125 c 5.2 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c10a i c90 t c = 90 c5a i cm t c = 25 c, 1 ms 20 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 ? i cm = 20 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 22 ? 10 s p c t c = 25 c 140 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) (to-247) 1.13/10nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-268 4 g to-268 (ixgt) g e high voltage igbt c (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 20 v 3 5 s note 2 c ies 650 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 40 pf c res 22 pf q g 29 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 5nc q gc 10 nc t d(on) 46 ns t ri 57 ns t d(off) 190 360 ns t fi 35 ns e off 0.38 0.8 mj t d(on) 48 ns t ri 59 ns e on 1.2 mj t d(off) 200 ns t fi 40 ns e off 0.6 mj r thjc 0.89 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c25 , v ge = 15 v r g = 22 ?, v ce = 0.5 v ces inductive load, t j = 25 c i c = i c25 , v ge = 15 v r g = 22 ?, v ce = 0.5 v ces ixgh 10n170a ixgt 10n170a to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 %
? 2003 ixys all rights reserved ixgh 10n170a ixgt 10n170a fig. 2. extended output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 051 01 5202530 v ce - volts i c - amperes v g e = 1 7v 9v 1 1v 7v 1 3v 1 5v fig. 3. output characteristics @ 125 deg. c 0 1 2 3 4 5 6 7 8 9 10 12345678910 v ce - volts i c - amperes v g e = 1 7v 1 5v 1 3v 1 1v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 1 2 3 4 5 6 7 8 9 10 12 3456 789 v ce - volts i c - amperes v g e = 1 7v 1 5v 1 3v 1 1v 7v 9v fig. 6. input admittance 0 2.5 5 7.5 10 12 . 5 15 456789 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.8 1 1. 2 1. 4 1. 6 1. 8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 1 0a i c = 5a i c = 2.5a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emiiter voltage 3 4 5 6 7 8 9 10 11 12 56789101112131415 v ge - volts v ce - volts t j = 25 o c i c = 1 0a 5a 2.5a
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 ixgh 10n170a ixgt 10n170a fig. 12. capacitance 10 10 0 10 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - pf c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 5 10 15 2 0 2 5 3 0 q g - nanocoulombs v g e - volts v c e = 600v i c = 5a i g = 1 0ma fig. 7. transconductance 0 1 2 3 4 5 6 7 8 0 2 . 5 5 7 . 5 10 12 . 5 15 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0.4 0.5 0.6 0.7 0.8 0.9 1 1 .1 1 .2 1 .3 0 204060801 00 1 20 1 40 r g - ohms e off - millijoules i c = 5a i c = 20a t j = 1 25 o c v g e = 1 5v v c e = 1 360v i c = 1 0a fig. 9. dependence of e off on i c 0.4 0.5 0.6 0.7 0.8 0.9 1 1. 1 1. 2 1. 3 1. 4 4 6 8 10 12 14 16 18 2 0 i c - amperes e off - millijoules r g = 20 ohms r g = 1 20 ohms t j = 1 25 o c v g e = 1 5v v c e = 850v fig. 10. dependence of e off on temperature 0.2 0.4 0.6 0.8 1 1. 2 1. 4 1. 6 0 255075100125150 t j - degrees centigrade e off - millijoules i c = 20a i c = 1 0a v g e = 1 5v v c e = 850v so lid lines - r g = 1 20 ohms dashed lines - r g = 20 ohms i c = 5a
? 2003 ixys all rights reserved ixgh 10n170a ixgt 10n170a fig. 13. maxim um t ransient t herm al resistance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1 10 100 1000 puls e w idth - millis e c ond s r (th) j c - (oc/w)
|
